APTM20TDUM16P Datasheet, PDF (6/6 Pages) Advanced Power Technology – Triple dual common source MOSFET Power Module

Delay Times vs Current
120
100
80
V_DS=133V
60 ^RG=5Ω
T_J=125°C
40 ^L=100µH
t _{d(of f)}
t_d(on)
20
0
0 25 50 75 100 125 150 175
I_D, Drain Current (A)
Switching Energy vs Current
2
V_DS=133V
RG=5Ω
1.5 T_J=125°C
L=100µH
1
E_off
E_on
0.5
0
0 25 50 75 100 125 150 175
I_D, Drain Current (A)
Operating Frequency vs Drain Current
300
V_DS=133V
250
D=50%
R_G=5Ω
200
T_J=125°C
150
100
50
0
25 38 50 63 75 88 100
I_D, Drain Current (A)
APTM20TDUM16P
Rise and Fall times vs Current
160
140
V_DS=133V
R _G=5Ω
120 ^TJ^=125°C
t_f
L=100µH
100
80
60
t_r
40
20
0
0 25 50 75 100 125 150 175
I_D, Drain Current (A)
Switching Energy vs Gate Resistance
3
V_DS=133V
2.5 ^ID=104A
T_J=125°C
E_off
L=100µH
2
1.5
E_on
1
0.5
0
5 10 15 20 25 30 35 40 45 50
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
T_J=150°C
100
T_J=25°C
10
1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V_SD, Source to Drain Voltage (V)
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