APT15GP60B Datasheet, PDF (6/6 Pages) Microsemi Corporation – POWER MOS 7 IGBT

APT15DF60
V_CC
I_C V_CE
A
D.U.T.
Figure 21, Inductive Switching Test Circuit
90%
t_d(off)
Gate Voltage _{TJ = 125 C}
Collector Voltage
t_f
90%
Switching Energy
10%
0
Collector Current
Figure 23, Turn-off Switching Waveforms and Definitions
APT15GP60B_S
10%
t_d(on)
t_r
90%
10%
5%
Switching Energy
Gate Voltage
T_J = 125 C
Collector Current
5%
Collector Voltage
Figure 22, Turn-on Switching Waveforms and Definitions
V_TEST
*DRIVER SAME TYPE AS D.U.T.
A
100uH
A
DRIVER*
V_CE
I_C
V_CLAMP
B
D.U.T.
Figure 24, E_ON1 Test Circuit
TO-247 (B) Package Outline
D³PAK (S) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
1.04 (.041)
1.15(.045)
20.80 (.819)
21.46 (.845)
Revised
4/18/95
13.79 (.543)
13.99(.551)
0.40 (.016)
0.79 (.031)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Collector
Emitter
0.46
0.56
(.018)
(.022)
{3
Plcs}
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.22 (.048)
1.32 (.052)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Emitter
Collector
Gate
Dimensions in Millimeters (Inches)
Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
13.41 (.528)
13.51(.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Collector)
and Leads are Plated