APTM20DUM05 Datasheet, PDF (5/6 Pages) Advanced Power Technology – Dual common source MOSFET Power Module

Breakdown Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
T_J, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T_C, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
Coss
1000
Crss
100
0
10 20 30 40 50
V_DS, Drain to Source Voltage (V)
APTM20DUM05
ON resistance vs Temperature
2.5
V_GS=10V
2.0 ^{ID= 158.5A}
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
T_J, Junction Temperature (°C)
Maximum Safe Operating Area
10000
1000
limited
by R_DSon
100µs
100
1ms
10ms
10
Single pulse
T_J=150°C
1
DC line
1
10
100
1000
V_DS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
12
I_D=300A
10 _TJ=25°C
V_DS=40V
V_DS=100V
8
V_DS=160V
6
4
2
0
0 100 200 300 400 500
Gate Charge (nC)
APT website – http://www.advancedpower.com
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