APTM120UM95F-ALN Datasheet, PDF (5/6 Pages) Advanced Power Technology – Single Switch MOSFET Power Module

Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
T_J, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T_C, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
Coss
1000
Crss
100
0 10 20 30 40 50
V_DS, Drain to Source Voltage (V)
APTM120UM95F-AlN
ON resistance vs Temperature
2.5
V_GS=10V
2.0 ^ID=51.5A
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
T_J, Junction Temperature (°C)
1000
Maximum Safe Operating Area
100µs
limited by RDSon
1ms
100
10
1
1
10ms
Single pulse
T_J=150°C
10
100
10102000
V_DS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
12
I_D=103A
T_J=25°C
V_DS=240V
10
V_DS=600V
8
V_DS=960V
6
4
2
0
0 240 480 720 960 1200 1440
Gate Charge (nC)
APT website – http://www.advancedpower.com
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