APTGT100H60T3 Datasheet, PDF (5/5 Pages) Advanced Power Technology – Full - Bridge Trench + Field Stop IGBT Power Module

APTGT100H60T3
Operating Frequency vs Collector Current
120
VCE=300V
100
D=50%
ZCS
R_G= 10Ω
80
TJ=150°C
ZVS
60
Tc=85°C
40
20
0
0
Hard
switching
25 50 75 100 125 150
I_C (A)
Forward Characteristic of diode
200
175
150
125
100
TJ=125°C
75
TJ=150°C
50
25
TJ=25°C
0
0 0.4 0.8 1.2 1.6 2 2.4
V_F (V)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.8
0.9
0.7
Diode
0.6 0.7
0.5
0.5
0.4
0.3 0.3
0.2
0.1
0.1
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
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5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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