APT60GU30B Datasheet, PDF (5/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
5,000
Cies
1,000
500
Coes
100
50
Cres
10
0
10
20
30
40
50
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT60GU30B_S
250
200
150
100
50
0
0 50 100 150 200 250 300 350
V_CE, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
10^-5
0.9
0.7
0.5
Note:
0.3
t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Junction
temp. ( C)
RC MODEL
0.0218
0.00450F
Power
(watts)
0.119
0.0119F
Case temperature
0.160
0.121F
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
400
100
F_max = min(f_max1, f_{max 2} )
50
f _{max 1}
=
t _{d (on )}
+
0.05
t _r + t _{d(off )}
+
t_f
T_J = 125°C
T_C = 75°C
D = 50 %
V_CE = 200V
R_G = 5 Ω
10
10 20 30
40 50
60 70
f_{max 2}
=
P_diss − P_cond
E_on2 + E_off
P_diss
=
T_J − T_C
R _θJC
80 90
I_C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current