English
Language : 

APT5513JFLL Datasheet, PDF (5/5 Pages) Advanced Power Technology – POWER MOS 7 FREDFET
Typical Performance Curves
10 %
t
d(on)
90%
t
r
5%
5%
10 %
Switching Energy
Gate Voltage
TJ = 125 C
Drain Current
Drain Voltage
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60B
VDD
IC
VCE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
APT5513JFLL
90%
td(off)
90%
tf
10%
0
Switching Energy
Gate Voltage
TJ = 125 C
Drain Voltage
Drain Current
Figure 19, Turn-off Switching Waveforms and Definitions
r = 4.0 (.157)
(2 places)
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
* Source
Gate
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.