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APT50M65JLL_03 Datasheet, PDF (5/5 Pages) Advanced Power Technology – POWER MOS 7 R MOSFET
Typical Performance Curves
10 %
t
d(on)
t
r
90%
Gate Voltage
TJ = 125 C
Drain Current
10 %
Switching Energy
5%
Drain Voltage
Figure 18, Turn-on Switching Waveforms and Definitions
VDD
APT60DF60
IC VCE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
90%
td(off)
90%
APT50M65JLL
Gate Voltage
TJ = 125 C
Drain Voltage
Switching Energy
10%
tf
0
Drain Current
Figure 19, Turn-off Switching Waveforms and Definitions
r = 4.0 (.157)
(2 places)
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP®is a Registered Trademark of SGS Thomson. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.