APT40GP90J Datasheet, PDF (5/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
7,000
Cies
1,000
500
Coes
100
50
Cres
10
0
10
20
30
40
50
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT40GP90J
180
160
140
120
100
80
60
40
20
0
0
200 400 600 800 1000
V_CE, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
0.50
0.40
0.30
0.20
0.10
0
10^-5
0.9
0.7
0.5
Note:
0.3
0.1
SINGLE PULSE
0.05
t1
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Junction
temp (°C)
RC MODEL
0.0966
0.00997F
Power
(watts)
0.228
0.0158F
Case temperature(°C)
0.116
1.96F
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
140
50
F_max = min(f_max1, f_{max 2} )
10
f _{max 1}
=
t _{d (on )}
+
0.05
t _r + t _{d(off )}
+
t_f
5
T_J = 125°C
T_C = 75°C
f_{max 2}
=
P_diss − P_cond
E_on2 + E_off
D = 50 %
V_CE = 600V
1 ^{RG = 5Ω}
P_diss
=
T_J − T_C
R _θJC
10
20
30
40
50
60
I_C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current