APT40GP60B Datasheet, PDF (5/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
10,000
5,000
Cies
1,000
500
100
50
10
Coes
Cres
0
0
10
20
30
40
50
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT40GP60B_S
180
160
140
120
100
80
60
40
20
0
0 100 200 300 400 500 600 700
V_CE, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
0.25
0.9
0.20
0.15
0.10
0.05
0 _10-5
0.7
0.5
Note:
t1
0.3
t2
Duty Factor D = ^t1/t2
0.1
Peak TJ = PDM x Z_θJC + TC
0.05
SINGLE PULSE
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Junction
temp. ( ”C)
RC MODEL
0.0106
0.00663F
Power
(Watts)
0.0868
0.0106F
Case temperature
0.133
0.262F
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
260
100
F_max = min(f_max1, f_{max 2} )
50
f _{max 1}
=
t _{d ( on )}
+
0.05
t _r + t _{d(off )}
+
t_f
T_J = 125°C
T_C = 75°C
f_{max 2}
=
P_diss − P_cond
E_{on 2} + E_off
D = 50 %
V_CE = 400V
R_G = 5 Ω
10
P_diss
=
T_J − T_C
R _θJC
20 30 40 50 60 70 80
I_C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current