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APTM50DAM19 Datasheet, PDF (4/6 Pages) Advanced Power Technology – Boost chopper MOSFET Power Module | |||
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APTM50DAM19
Typical Performance Curve
0.12
0.1
0.08
0.06
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.04 0.3
0.02 0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
700
600
VGS=10&15V
500
8V
7.5V
400
300
200
100
0
0
7V
6.5V
6V
5.5V
5
10 15 20 25
VDS, Drain to Source Voltage (V)
1.20
1.15
1.10
RDS(on) vs Drain Current
Normalized to
VGS=10V @ 81.5A
VGS=10V
1.05
1.00
VGS=20V
0.95
0.90
0.85
0.80
0
100
200
300
400
ID, Drain Current (A)
Transfert Characteristics
500
VDS > ID(on)xRDS(on)MAX
400 250µs pulse test @ < 0.5 duty cycle
300
200
100
0
0
TJ=25°C
TJ=125°C
TJ=-55°C
12345678
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
180
160
140
120
100
80
60
40
20
0
25 50 75 100 125 150
TC, Case Temperature (°C)
APT website â http://www.advancedpower.com
4â6
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