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APTM50DAM19 Datasheet, PDF (4/6 Pages) Advanced Power Technology – Boost chopper MOSFET Power Module
APTM50DAM19
Typical Performance Curve
0.12
0.1
0.08
0.06
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.04 0.3
0.02 0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
700
600
VGS=10&15V
500
8V
7.5V
400
300
200
100
0
0
7V
6.5V
6V
5.5V
5
10 15 20 25
VDS, Drain to Source Voltage (V)
1.20
1.15
1.10
RDS(on) vs Drain Current
Normalized to
VGS=10V @ 81.5A
VGS=10V
1.05
1.00
VGS=20V
0.95
0.90
0.85
0.80
0
100
200
300
400
ID, Drain Current (A)
Transfert Characteristics
500
VDS > ID(on)xRDS(on)MAX
400 250µs pulse test @ < 0.5 duty cycle
300
200
100
0
0
TJ=25°C
TJ=125°C
TJ=-55°C
12345678
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
180
160
140
120
100
80
60
40
20
0
25 50 75 100 125 150
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
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