APTM20HM20FT Datasheet, PDF (4/6 Pages) Advanced Power Technology – Full - Bridge MOSFET Power Module

APTM20HM20FT
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4
0.35 _0.9
0.3
0.25 ^0.7
0.2 0.5
0.15
0.3
0.1
0.05
0.1
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
250
V_GS=15&10V _9V
200
150
7.5V
7V
100
6.5V
50
6V
5.5V
0
0
5
10 15
20 25
V_DS, Drain to Source Voltage (V)
Transfert Characteristics
200
V_DS > I_D(on)xR_DS(on)MAX
250µs pulse test @ < 0.5 duty cycle
160
120
80
40
0
2
T_J=25°C
T_J=125°C
T_J=-55°C
3456789
V_GS, Gate to Source Voltage (V)
1.2
1.15
R_DS(on) vs Drain Current
Normalized to
V_GS=10V @ 44.5A
1.1
1.05
V_GS=10V
1
0.95
V_GS=20V
0.9
0
20 40 60 80 100 120
I_D, Drain Current (A)
DC Drain Current vs Case Temperature
100
80
60
40
20
0
25
50
75 100 125 150
T_C, Case Temperature (°C)
APT website – http://www.advancedpower.com
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