APTM10DHM09T Datasheet, PDF (4/6 Pages) Advanced Power Technology – Asymmetrical - Bridge MOSFET Power Module

APTM10DHM09T
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3 ^0.9
0.25 _0.7
0.2
0.5
0.15
0.3
0.1
0.05 ^0.1
Single Pulse
0 ^0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
600
500
V_GS=15V, 10V & 9V
400
300
8V
200
7V
100
6V
0
0 4 8 12 16 20 24 28
V_DS, Drain to Source Voltage (V)
R_DS(on) vs Drain Current
1.2
Normalized to
V_GS=10V @ 69.5A
1.1
V_GS=10V
1
VGS=20V
0.9
0.8
0
25
50
75
100
I_D, Drain Current (A)
Transfert Characteristics
120
V_DS > I_D(on)xR_DS(on)MAX
100 250µs pulse test @ < 0.5 duty cycle
80
60
40
T_J=25°C
20
T_J=125°C
T_J=-55°C
0
01234567
V_GS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
160
140
120
100
80
60
40
20
0
25 50 75 100 125 150
T_C, Case Temperature (°C)
APT website – http://www.advancedpower.com
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