APTGF25DDA120T3 Datasheet, PDF (4/6 Pages) Advanced Power Technology – Dual Boost Chopper NPT IGBT Power Module

Typical Performance Curve
Output characteristiTcsJ=(2V5°_GC_E=15V)
80
250µs Pulse Test
70 _{< 0.5% Duty cycle}
60
50
TJ=125°C
40
30
20
10
0
01 2 3 45 6 7 8
VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
120
100
250µs Pulse Test
< 0.5% Duty cycle
80
60
40
TJ=125°C
20
TJ= 25 °C
0
0 2.5 5 7.5 10 12.5 15
V_GE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
9
8 ^{T J = 125°C}
250µs Pulse Test
7 < 0.5% Duty cycle
6
Ic=50A
5
4
Ic=25A
3
2
Ic=12.5A
1
0
9 10 11 12 13 14 15 16
VGE, Gate to Emitter Voltage (V)
Breakdown Voltage vs Junction Temp.
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-50
-25 0 25 50 75 100 125
TJ, Junction Temperature (°C)
APTGF25DDA120T3
Output Characteristics (V_GE=10V)
20
250µs Pulse Test
TJ=25°C
< 0.5% Duty cycle
16
12
8
TJ=125°C
4
0
0 0.5 1 1.5 2 2.5 3 3.5
VCE, Collector to Emitter Voltage (V)
18
16
IC = 25A
TJ = 25°C
14
12
10
8
6
4
2
0
0 30
Gate Charge
VCE =240V
V CE= 6 00V
V C E= 960 V
60 90 120 150 180
Gate Charge (nC)
On state Voltage vs Junction Temperature
6
250µs Pulse Test
5 < 0.5% Duty cycle
V_GE = 15V
4
Ic=50A
Ic=25A
3
Ic=12.5A
2
1
0
-50
-25 0 25 50 75 100 125
TJ, Junction Temperature (°C)
DC Collector Current vs Case Temperature
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
T_C, Case Temperature (°C)
APT website – http://www.advancedpower.com
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