APTC80AM75SC Datasheet, PDF (4/7 Pages) Advanced Power Technology – Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module

APTC80AM75SC
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.25
0.2
0.9
0.7
0.15
0.5
0.1
0.3
0.05
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
160
140
V_GS=15&10V
120
6.5V
100
6V
80
60
40
20
0
0
5.5V
5V
4.5V
4V
5
10 15 20 25
V_DS, Drain to Source Voltage (V)
Transfert Characteristics
200
V_DS > I_D(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
150
100
50
T_J=25°C
T_J=125°C
T_J=-55°C
0
012345678
V_GS, Gate to Source Voltage (V)
R_DS(on) vs Drain Current
1.4
Normalized to
1.3 VGS=10V @ 28A
V_GS=10V
1.2
1.1
V_GS=20V
1
0.9
0.8
0
20 40 60 80 100 120
I_D, Drain Current (A)
DC Drain Current vs Case Temperature
60
50
40
30
20
10
0
25 50 75 100 125 150
T_C, Case Temperature (°C)
APT website – http://www.advancedpower.com
4–7