APT6021BLL_04 Datasheet, PDF (4/5 Pages) Advanced Power Technology – Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

Typical Performance Curves
116
OPERATION HERE
50
LIMITED BY R_DS (ON)
10
100µS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
10
100
600
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 29A
1mS
10mS
12
VDS=120V
VDS=300V
8
VDS=480V
4
0
0
20 40 60 80 100 120
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
70
60
50
V_DD = 400V
40 ^{RG = 5Ω}
T_J = 125°C
L = 100µH
30
t_d(off)
20
t_d(on)
10
0
0
10
20
30
40
50
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
1000
V_DD = 400V
R_G = 5Ω
800 ^TJ ^{= 125°C}
600
L = 100µH
E_ON includes
diode reverse recovery.
E_on
400
E_off
200
0
0
10
20
30
40
50
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
10,000
1,000
APT6021BLL_SLL
Ciss
Coss
100
Crss
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
60
V_DD = 400V
R_G = 5Ω
50 T_J = 125°C
L = 100µH
40
t_f
30
t_r
20
10
0
0
10
20
30
40
50
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1400
1200
1000
800
V_DD = 400V
I_D = 29A
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
E_off
E_on
600
400
200
0
0
10
20
30
40
50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE