APT55M65JFLL Datasheet, PDF (4/5 Pages) Advanced Power Technology – POWER MOS 7 FREDFET

252
100
OPERATION HERE
LIMITED BY R_DS (ON)
50
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
10
100
550
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 63A
10mS
12
VDS= 110V
8
VDS= 275V
VDS= 440V
4
0
0
50 100 150 200 250 300
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
180
160
t_d(off)
140
120
100
80
V_DD = 367V
R_G = 5Ω
T_J = 125°C
L = 100µH
60
40
t_d(on)
20
0
10 30 50 70 90 110 130
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
4500
4000
3500
3000
2500
2000
1500
E_on
1000
V_DD = 367V
R_G = 5Ω
T_J = 125°C
500
0
10
E_off
30 50
L = 100µH
E_ON includes
diode reverse recovery.
70 90 110 130
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
30,000
10,000
1,000
APT55M65JFLL
Ciss
Coss
100
Crss
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
300
100
TJ =+150°C
TJ =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
180
V_DD = 367V
160 ^RG ^{= 5Ω}
T_J = 125°C
140 L = 100µH
t_f
120
100
80
60
40
20
t_r
0
10 30 50 70 90 110 130
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
6,000
V_DD = 367V
I_D = 63A
5,000 T_J = 125°C
L = 100µH
E_ON includes
4,000 diode reverse recovery.
E_off
3,000
E_on
2,000
1,000
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE