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APT5518BFLL Datasheet, PDF (4/5 Pages) Advanced Power Technology – POWER MOS 7 FREDFET
126
50
OPERATION HERE
LIMITED BY RDS (ON)
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
10
100
550
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
ID = 31A
10mS
12
VDS=110V
VDS=275V
8
VDS=440V
4
0
0
20
40
60
80
100
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
60
50
40 VDD = 367V
RG = 5Ω
30 TJ = 125°C
L = 100µH
20
td(on)
10
td(off)
0
0
10
20
30
40
50
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
1000
800
600
VDD = 367V
RG = 5Ω
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
Eon
400
200
Eoff
0
0
10
20
30
40
50
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
10,000
1,000
APT5518 BFLL - SFLL
Ciss
Coss
100
Crss
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
60
VDD = 367V
50
RG = 5Ω
TJ = 125°C
tf
L = 100µH
40
30
20
10
tr
0
0
10
20
30
40
50
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1000
800
Eon
600
400
Eoff
VDD = 367V
ID = 31A
200
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
0
0 5 10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE