APT50M60JN Datasheet, PDF (4/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

500
100
50
OPERATION HERE
LIMITED BY R_DS (ON)
10
5
1 _{TC =+25°C}
.5 TJ =+150°C
SINGLE PULSE
10µS
100µS
1mS
10mS
100mS
DC
.1
1
5 10
50 100
500
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
20
I_D = I_D [Cont.]
VDS=100V
16
VDS=250V
12
VDS=400V
8
4
50,000
APT50M60JN
10,000
5,000
Ciss
Coss
1,000
Crss
500
.1
.5 1
5 10
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
400
TJ =+150°C
100
50
TJ =+25°C
TJ =-55°C
10
5
0
0
200 400 600 800 1000
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
1
0
0.4
0.8
1.2
1.6
2.0
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
APT Reserves the right to change, without notice, the specifications and information contained herein.
r = 4.0 (.157)
(2 places)
SOT-227 (ISOTOP^®) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) ^{25.4 (1.000)}
0.85 (.033) 12.8 (.504)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
* Source
* Source
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
Gate
ISOTOP^® is a Registered Trademark of SGS Thomson.
Dimensions in Millimeters and (Inches)