APT50M50JLL Datasheet, PDF (4/5 Pages) Advanced Power Technology – POWER MOS 7 MOSFET

356
OPERATION HERE
LIMITED BY R_DS (ON)
100
100µS
10
1mS
TC =+25°C
TJ =+150°C
1 ^{SINGLE PULSE}
1
10
100
500
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 71A
10mS
12
VDS=100V
VDS=250V
VDS=400V
8
4
0
0 50 100 150 200 250 300
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
120
100
80 V_DD = 333V
R_G = 3Ω
60 ^{TJ = 125°C}
L = 100µH
40
t_d(off)
20
t_d(on)
0
10
30
50
70
90
110
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
3000
2500
2000
V_DD = 333V
R_G = 3Ω
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
1500
1000
500
E_on
E_off
0
10
30
50
70
90
110
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
30,000
10,000
1,000
APT50M50JLL
Ciss
Coss
100
Crss
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
160
V_DD = 333V
140 ^RG ^{= 3Ω}
T_J = 125°C
t_f
120 ^{L = 100µH}
100
80
60
40
t_r
20
0
10
30
50
70
90
110
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
7000
V_DD = 333V
6000 ^{ID = 71A}
T_J = 125°C
L = 100µH
E_off
5000 E_ON includes
diode reverse recovery.
4000
3000
2000
E_on
1000
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE