APT50GT60BRDQ1 Datasheet, PDF (4/9 Pages) Advanced Power Technology – Thunderbolt IGBT

25
20
15
V_GE = 15V
10
5 ^VCE ^{= 400V}
T_J = 25°C, or 125°C
R_G = 4.3Ω
L = 100µH
0
0 20 40 60
80 100 120
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
90 _{RG = 4.3Ω, L = 100µH, VCE = 400V}
80
70
60
50
40
30
20
T_J = 25 or 125°C,V_GE = 15V
10
00
20
40
60
80 100 120
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
5000
4000
V_CE = 400V
V_GE = +15V
R_G = 4.3Ω
T_J = 125°C
3000
2000
1000
T_J = 25°C
0
0 20 40 60 80 100 120
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
10,000
8,000
V_CE = 400V
V_GE = +15V
T_J = 125°C
E_on2,100A
6,000
4,000 ^Eoff,^100A
E_off,50A
2,000
E_on2,50A
E_off,25A
E_on2,25A
0
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT50GT60BRDQ1(G)
350
300
250 _{VGE =15V,TJ=125°C}
200
V_GE =15V,T_J=25°C
150
50
V_CE = 400V
R_G = 4.3Ω
L = 100µH
0
0 20 40 60 80 100 125
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
180
R_G = 4.3Ω, L = 100µH, V_CE = 400V
160
140
120
100
T_J = 125°C, V_GE = 15V
80
60
40
T_J = 25°C, V_GE = 15V
20
00
20 40
60
80 100 120
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
3500
3000
V_CE = 400V
V_GE = +15V
R_G = 4.3Ω
2500
T_J = 125°C
2000
1500
1000
500
T_J = 25°C
0
0 20 40 60 80 100 120
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
5,000
4,000
V_CE = 400V
V_GE = +15V
R_G = 4.3Ω
E_on2,100A
3,000
E_off,100A
2,000
1,000
E_on2,25A
E_on2,50A
E_off,50A
0
E_off,25A
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature