APT50GP60B2DQ2 Datasheet, PDF (4/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

25
V_GE = 15V
20
15
10
5 ^VCE ^{= 400V}
T_J = 25°C or 125°C
R_G = 4.3Ω
L = 100µH
0
20 30 40 50 60 70 80 90 100 110
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
90
R_G = 4.3Ω, L = 100µH, V_CE = 400V
80
70
60
50
40
30
20
T_J = 25 or 125°C,V_GE = 15V
10
0 _{20 30 40 50 60 70 80 90 100 110}
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
4000
3500
V_CE = 400V
V_GE = +15V
R_G = 4.3Ω
T_J = 125°C
3000
2500
2000
1500
1000
500
T_J = 25°C
0 _{20 30 40 50 60 70 80 90 100 110}
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
6000
5000
V_CE = 400V
V_GE = +15V
T_J = 125°C
4000
3000
E_on2,100A
E_off,100A
2000
E_on2,50A
1000 _Eon2,25A
E_off,50A
0
E_off,25A
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT50GP60B2DQ2(G)
140
120
100
V_GE =15V,T_J=125°C
80
60
V_GE =15V,T_J=25°C
40
20 ^VCE ^{= 400V}
R_G = 4.3Ω
L = 100µH
0
20 30 40 50 60 70 80 90 100 110
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
120 _{RG = 4.3Ω, L = 100µH, VCE = 400V}
100 ^{TJ = 125°C, VGE = 15V}
80
60
T_J = 25°C, V_GE = 15V
40
20
020 _{30 40 50 60 70 80 90 100 110}
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
3500
3000
V_CE = 400V
V_GE = +15V
R_G = 4.3Ω
2500
2000
T_J = 125°C
1500
1000
500
T_J = 25°C
020 _{30 40 50 60 70 80 90 100 110}
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
4000
3500
V_CE = 400V
V_GE = +15V
R_G = 4.3Ω
3000
E_on2,100A
2500
E_off,100A
2000
1500
1000
E_on2,50A
E_off,50A
500
E_on2,25A
0
0
25
50
E_off,25A
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature