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APT50GN120L2DQ2 Datasheet, PDF (4/9 Pages) Advanced Power Technology – IGBT
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35
30
VGE = 15V
25
20
15
10
VCE = 800V
5 TJ = 25°C, TJ =125°C
RG = 2.2Ω
L = 100 µH
0
20 30 40 50 60
70 80
90 100 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
120
RG = 2.2Ω, L = 100µH, VCE = 800V
100
80
60
40
20
TJ = 25 or 125°C,VGE = 15V
020 30 40 50 60 70 80 90 100 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
25000
20000
VCE = 800V
VGE = +15V
RG = 2.2Ω
TJ = 125°C,VGE =15V
15000
10000
5000
TJ = 25°C,VGE =15V
0
20 30 40 50 60 70 80 90 100 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
50000
40000
VCE = 800V
VGE = +15V
TJ = 125°C
Eon2,100A
30000
20000
Eoff,100A
10000 Eon2,50A
Eoff,50A
0
Eon2,25A
Eoff,25A
0
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT50GN120L2DQ2(G)
500
VGE =15V,TJ=125°C
400
300
VGE =15V,TJ=25°C
200
100
VCE = 800V
RG = 2.2Ω
L = 100 µH
0
20 30 40 50 60 70 80 90 100 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
300
RG = 2.2Ω, L = 100µH, VCE = 800V
250
200
TJ = 125°C, VGE = 15V
150
100
TJ = 25°C, VGE = 15V
50
0
20 30 40 50 60 70 80 90 100 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
14000
12000
VCE = 800V
VGE = +15V
RG = 2.2Ω
10000
TJ = 125°C, VGE = 15V
8000
6000
4000
2000
TJ = 25°C, VGE = 15V
0
20 30 40 50 60 70 80 90 100 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
22000
20000
18000
VCE = 800V
VGE = +15V
RG = 2.2Ω
16000
14000
Eon2,100A
Eoff,100A
12000
10000
8000
Eon2,50A
6000
4000
2000
0
Eoff,25A
Eoff,50A
Eon2,25A
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
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