APT5022AVR Datasheet, PDF (4/4 Pages) Advanced Power Technology – Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

100
50
OPERATION HERE
LIMITED BY R_DS (ON)
10µS
100µS
10
5
1
.5 ^{TC =+25°C}
TJ =+150°C
SINGLE PULSE
1mS
10mS
100mS
DC
.1
1
5 10
50 100
500
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
20
I_D = I_D [Cont.]
VDS=100V
16
VDS=250V
12
VDS=400V
8
4
0
0 50 100 150 200 250 300
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
20,000
10,000
5,000
1,000
500
APT5022AVR
Ciss
Coss
Crss
100
.01
.1
1
10
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C TJ =+25°C
50
10
5
1
0
0.4
0.8
1.2
1.6
2.0
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
22.23 (.875) Max.
6.35 (.250)
9.15 (.360)
TO-3 (TO-204AE) Package Outline
Seating
Plane
1.47 (.058)
1.60 (.063)
(2-Places)
1.52 (.060)
3.43 (.135)
7.92 (.312)
12.70 (.500)
3.84 (.151)
4.09 (.161)
(2-Places)
Gate
Source
Drain
(Case)
Dimensions in Millimeters and (Inches)
16.64 (.655)
17.15 (.675)
38.61 (1.52)
39.12 (1.54)
29.90 (1.177)
30.40 (1.197)
5.21 (.205)
5.72 (.225)
10.67 (.420)
11.18 (.440)
25.15 (0.990)
26.67 (1.050)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058