APT5016BFLL_04 Datasheet, PDF (4/5 Pages) Advanced Power Technology – POWER MOS 7 FREDFET

Typical Performance Curves
120
OPERATION HERE
LIMITED BY R_DS (ON)
100µS
10
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
5 10
50 100
500
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 30
14
12
VDS=100V
1mS
10mS
10
VDS=250V
8
VDS=400V
6
4
2
0
0 10 20 30 40 50 60 70 80 90 100
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
60
t_d(off)
50
40 V_DD = 333V
R_G = 5Ω
30 ^{TJ = 125°C}
L = 100µH
20
10
t_d(on)
0
0
10
20
30
40
50
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
1000
800
600
V_DD = 333V
R_G = 5Ω
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
E_on
400
200
E_off
0
0
10
20
30
40
50
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
10,000
5,000
1,000
APT5016BFLL_SFLL
Ciss
Coss
100
Crss
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
50
TJ =+150°C
TJ =+25°C
10
5
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
60
V_DD = 333V
R_G = 5Ω
50 _{TJ = 125°C}
L = 100µH
40
t_f
30
20
10
t_r
0
0
10
20
30
40
50
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1200
V_DD = 333V
I_D = 30A
1000 T_J = 125°C
E_off
L = 100µH
E_ON includes
800 diode reverse recovery.
600
E_on
400
200
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE