APT5010JVFR Datasheet, PDF (4/4 Pages) Advanced Power Technology – Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

200
100
50
OPERATION HERE
LIMITED BY R_DS (ON)
10µS
100µS
10
5
1
TC =+25°C
.5 TJ =+150°C
SINGLE PULSE
1mS
10mS
100mS
DC
.1
1
5 10
50 100
500
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
20
I_D = I_D [Cont.]
VDS=100V
16
VDS=250V
12
VDS=400V
8
4
0
0
100 200 300 400 500
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
30,000
10,000
5,000
1,000
500
APT5010JVFR
Ciss
Coss
Crss
100
.01
.1
1
10
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C TJ =+25°C
50
10
5
1
0
0.4
0.8 1.2
1.6
2.0
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
r = 4.0 (.157)
(2 places)
SOT-227 (ISOTOP^®) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) ^{25.4 (1.000)}
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP^® is a Registered Trademark of SGS Thomson.
"UL Recognized" File No. E145592
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058