APT5010B2FLL_04 Datasheet, PDF (4/5 Pages) Advanced Power Technology – POWER MOS 7 FREDFET

184
100
OPERATION HERE
LIMITED BY R_DS (ON)
100µS
1mS
10
TC =+25°C
TJ =+150°C
SINGLE PULSE
10mS
1
1
10
100
500
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 46A
12
VDS=100V
8
VDS=250V
VDS=400V
4
0
0 20 40 60 80 100 120 140
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
80
70
t_d(off)
60
V_DD = 330V
50 R_G = 5Ω
T_J = 125°C
40 _{L = 100µH}
30
20
t_d(on)
10
0
10 20 30 40 50 60 70
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
1500
1200
V_DD = 330V
R_G = 5Ω
T_J = 125°C
L = 100µH
900
E_ON includes
diode reverse recovery.
E_on
600
300
E_off
0
10 20 30 40 50 60 70
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
20,000
10,000
1,000
APT5010B2FLL_LFLL
Ciss
Coss
100
Crss
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
10
TJ =+25°C
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
100
V_DD = 330V
90 R_G = 5Ω
80 ^{TJ = 125°C}
L = 100µH
70
60
t_f
50
40
t_r
30
20
10
0
10 20 30 40 50 60 70
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2500
V_DD = 330V
I_D = 46A
2000 ^{TJ = 125°C}
L = 100µH
E_ON includes
diode reverse recovery.
E_off
1500
E_on
1000
500
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE