APT47N60BC3 Datasheet, PDF (4/5 Pages) Advanced Power Technology – Super Junction MOSFET

Typical Performance Curves
188
OPERATION HERE
100
LIMITED BY R_DS (ON)
50
10
100µS
5
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
10
100
600
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 47A
1mS
10mS
12
VDS= 120V
8
VDS= 300V
VDS= 480V
4
0
0 50 100 150 200 250 300 350 400
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
350
300
250
200
150
V_DD = 400V
R_G = 5Ω
T_J = 125°C
L = 100µH
t_d(off)
100
50
t_d(on)
0
0 10 20 30 40 50 60 70 80
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
2500
2000
1500
V_DD = 400V
R_G = 5Ω
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
E_off
1000
500
E_on
0
0 10 20 30 40 50 60 70 80
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
30,000
10,000
1,000
APT47N60BC3_SC3
Ciss
Coss
100
Crss
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
120
V_DD = 400V
R_G = 5Ω
100 _{TJ = 125°C}
t_f
L = 100µH
80
60
40
t_r
20
0
0 10 20 30 40 50 60 70 80
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
4500
V_DD = 400V
4000 ^I_D ^{= 47A}
E_off
3500
T_J = 125°C
L = 100µH
3000
E_ON includes
diode reverse recovery.
2500
2000
1500
E_on
1000
500
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE