APT45GP120B2DQ2 Datasheet, PDF (4/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

25
20
V_GE = 15V
15
10
5 ^VCE ^{= 600V}
T_J = 25°C, T_J =125°C
R_G = 5Ω
L = 100 µH
0
0
20
40
60
80
100
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
80
R_G = 5Ω, L = 100µH, V_CE = 600V
70
60
50
40
30
20
T_J = 25 or 125°C,V_GE = 15V
10
00
20
40
60
80
100
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
8000
7000
V_CE = 600V
V_GE = +15V
R_G = 5Ω
6000
5000
T_J = 125°C,V_GE =15V
4000
3000
2000
1000
T_J = 25°C,V_GE =15V
0
0
20
40
60
80
100
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
12000
10000
V_CE = 600V
V_GE = +15V
T_J = 125°C
E_on2,90A
8000
E_off,90A
6000
4000
2000
E_off,45A
E_on2,45A
E_on2,22.5A
0
E_off,22.5A
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT45GP120B2DQ2(G)
180
160
140
V_GE =15V,T_J=125°C
120
100
80
V_GE =15V,T_J=25°C
60
40
20
V_CE = 600V
R_G = 5Ω
L = 100 µH
0
0
20
40
60
80
100
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
100
R_G = 5Ω, L = 100µH, V_CE = 600V
80
T_J = 125°C, V_GE = 15V
60
40
T_J = 25°C, V_GE = 15V
20
00
20
40
60
80
100
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
6000
5000
V_CE = 600V
V_GE = +15V
R_G = 5Ω
T_J = 125°C, V_GE = 15V
4000
3000
2000
1000
T_J = 25°C, V_GE = 15V
00
20
40
60
80
100
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
8000
7000
V_CE = 600V
V_GE = +15V
R_G = 5Ω
E_on2,90A
6000
5000
4000
3000 ^Eoff,90A
2000 ^Eon2,45A
E_off,45A
E_on2,22.5A
1000
E_off,22.5A
0
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature