APT40GP90B Datasheet, PDF (4/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

25
20
V_GE = 15V
15
10
5 ^VCE ^{= 600V}
T_J = 25°C, T_J =125°C
R_G = 5Ω
L = 100 µH
0
10 20 30 40 50 60 70 80 90
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
70
R_G = 5Ω, L = 100µH, V_CE = 600V
60
50
40
30
20
T_J = 25 or 125°C,V_GE = 15V
10
0
10 20 30 40 50 60 70 80 90
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
6000
5000
V_CE = 600V
V_GE = +15V
R_G = 5Ω
4000
3000
T_J = 125°C,V_GE =15V
2000
1000
T_J = 25°C,V_GE =15V
0
10 20 30 40 50 60 70 80 90
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
8000
7000
V_CE = 600V
V_GE = +15V
T_J = 125°C
E_on2, 80A
6000
5000
4000
3000
E_off, 80A
E_on2, 40A
2000 E_off, 40A
1000
E_on2, 20A
0
E_off, 20A
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT40GP90B
120
100
V_GE =15V,T_J=125°C
80
V_GE =15V,T_J=25°C
60
40
20 _{VCE = 600V}
R_G = 5Ω
L = 100 µH
0
10 20 30 40 50 60 70 80 90
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
140 _{RG = 5Ω, L = 100µH, VCE = 600V}
120
100
T_J = 125°C, V_GE = 15V
80
60
T_J = 25°C, V_GE = 15V
40
20
0
10 20 30 40 50 60 70 80 90
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
3500
3000
V_CE = 600V
V_GE = +15V
R_G = 5Ω
2500
T_J = 125°C, V_GE = 15V
2000
1500
1000
500
T_J = 25°C, V_GE = 15V
0
10 20 30 40 50 60 70 80 90
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
6000
5000
V_CE = 600V
V_GE = +15V
R_G = 5Ω
E_on2, 80A
4000
E_off, 80A
3000
2000
E_on2, 40A
E_off, 40A
1000
E_on2, 20A
0
E_off, 20A
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature