APT35GP120JDQ2 Datasheet, PDF (4/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

25
20
V_GE = 15V
15
10
5 ^VCE ^{= 600V}
T_J = 25°C or 125°C
R_G = 4.3Ω
L = 100µH
0
10 20 30 40 50 60 70 80
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
50
R_G = 4.3Ω, L = 100µH, V_CE = 600V
40
30
20
T_J = 25 or 125°C,V_GE = 15V
10
0 _{10 20 30 40 50 60 70 80}
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
5000
4000
V_CE = 600V
V_GE = +15V
R_G = 4.3Ω
T_J = 125°C
3000
2000
1000
T_J = 25°C
0
10 20 30 40 50 60 70 80
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
8000
7000
V_CE = 600V
V_GE = +15V
T_J = 125°C
6000
E_on2,70A
5000
4000
3000
E_off,70A
E_on2,35A
2000
E_off,35A
E_on2,17.5A
1000
0
E_off,17.5A
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT35GP120JDQ2
180
160
140
120
V_GE =15V,T_J=125°C
100
80
60
V_GE =15V,T_J=25°C
40
20
V_CE = 600V
R_G = 4.3Ω
L = 100µH
0
10 20 30 40 50 60 70 80
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
100 _{RG = 4.3Ω, L = 100µH, VCE = 600V}
90
80
70
T_J = 125°C, V_GE = 15V
60
50
40
30
T_J = 25°C, V_GE = 15V
20
10
010 _{20 30 40 50 60 70 80}
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
4000
3500
V_CE = 600V
V_GE = +15V
R_G = 4.3Ω
3000
T_J = 125°C
2500
2000
1500
1000
500
T_J = 25°C
010 _{20 30 40 50 60 70 80}
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
5000
4000
V_CE = 600V
V_GE = +15V
R_G = 4.3Ω
E_on2,70A
3000
E_off,70A
2000
E_on2,35A
1000
E_off,35A
E_on2,17.5A
E_off,17.5A
0
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature