APT35GN120B Datasheet, PDF (4/6 Pages) Advanced Power Technology – IGBT

30
25
V_GE = 15V
20
15
10
5
V_CE = 800V
T_J = 25°C, T_J =125°C
R_G = 2.2Ω
L = 100 µH
0
10 20 30 40 50 60 70 80
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
80
R_G = 2.2Ω, L = 100µH, V_CE = 800V
70
60
50
40
30
20
T_J = 25 or 125°C,V_GE = 15V
10
010 _{20 30 40 50 60 70 80}
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
12000
10000
V_CE = 800V
V_GE = +15V
R_G = 2.2Ω
T_J = 125°C,V_GE =15V
8000
6000
4000
2000
T_J = 25°C,V_GE =15V
0
10 20 30 40 50 60 70 80
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
25000
20000
V_CE = 800V
V_GE = +15V
T_J = 125°C
E_on2,70A
15000
10000
E_off,70A
5000 ^Eon2,^35A
E_off,35A
0
E_on2,17.5A
E_off,17.5A
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT35GN120B(G)
450
350
300
V_GE =15V,T_J=125°C
250
V_GE =15V,T_J=25°C
200
150
100
50
V_CE = 800V
R_G = 2.2Ω
L = 100 µH
0
10 20 30 40 50 60 70 80
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
150
R_G = 2.2Ω, L = 100µH, V_CE = 800V
125
100
T_J = 125°C, V_GE = 15V
75
50
T_J = 25°C, V_GE = 15V
25
010 _{20 30 40 50 60 70 80}
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
8000
7000
6000
V_CE = 800V
V_GE = +15V
R_G = 2.2Ω
T_J = 125°C, V_GE = 15V
5000
4000
3000
2000
1000
T_J = 25°C, V_GE = 15V
0
10 20 30 40 50 60 70 80
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
12000
10000
V_CE = 800V
V_GE = +15V
R_G = 2.2Ω
8000 ^Eon2,70A
E_off,70A
6000
4000
E_on2,35A
2000
E_off,17.5A
E_off,35A
0
E_on2,17.5A
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature