APT31N80JC3 Datasheet, PDF (4/5 Pages) Advanced Power Technology – Super Junction MOSFET

Typical Performance Curves
93
OPERATION HERE
50
LIMITED BY R_DS (ON)
10
100µS
5
1mS
1
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
.1
1
10
100
800
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 31A
12
VDS= 160V
8
VDS= 400V
VDS= 640V
4
0
0
50 100 150 200 250 300
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
180
160
t_d(off)
140
120
100
80
V_DD = 533V
R_G = 5Ω
T_J = 125°C
L = 100µH
60
40
20
t_d(on)
0
0 10 20 30 40 50 60
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
2000
1500
V_DD = 533V
R_G = 5Ω
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
1000
E_off
E_on
500
0
0 10 20 30 40 50 60
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
20,000
10,000
1000
100
APT31N80JC3
Ciss
Coss
Crss
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
90
V_DD = 533V
80 R_G = 5Ω
70
T_J = 125°C
L = 100µH
t_f
60
50
40
30
20
10
t_r
0
0 10 20 30 40 50 60
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
4000
V_DD = 533V
3500 ^ID ^{= 31A}
T_J = 125°C
E_off
3000
2500
L = 100µH
E_ON includes
diode reverse recovery.
2000
E_on
1500
1000
500
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE