APT30M61BLL_04 Datasheet, PDF (4/5 Pages) Advanced Power Technology – POWER MOS 7 R MOSFET

Typical Performance Curves
216
100
OPERATION HERE
LIMITED BY R_DS (ON)
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
5 10
50 100 300
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 54
14
VDS = 60V
12
10
VDS = 150V
VDS = 240V
8
10mS
6
4
2
0
0 10 20 30 40 50 60 70 80 90 100
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
50
t_d(off)
40
V_DD = 200V
30 R_G = 5Ω
T_J = 125°C
L = 100µH
20
t_d(on)
10
0
10 20 30 40 50 60 70 80 90
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
900
800
700
600
V_DD = 200V
R_G = 5Ω
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
500
E_on
400
300
200
E_off
100
0
10 20 30 40 50 60 70 80 90
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
10,000
5,000
1,000
APT30M61BLL - SLL
Ciss
Coss
100
Crss
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
50
TJ =+150°C
TJ =+25°C
10
5
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
90
V_DD = 200V
80 R_G = 5Ω
70
T_J = 125°C
L = 100µH
t_f
60
50
40
30
20
t_r
10
0
10 20 30 40 50 60 70 80 90
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1200
V_DD = 200V
I_D = 54A
1000 T_J = 125°C
E_off
L = 100µH
E_ON includes
800 diode reverse recovery.
600
E_on
400
200
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE