APT30M17JLL_04 Datasheet, PDF (4/5 Pages) Advanced Power Technology – POWER MOS 7 R MOSFET

540
OPERATION HERE
LIMITED BY R_DS (ON)
100µS
100
50
TC =+25°C
TJ =+150°C
SINGLE PULSE
10
1
10
100 300
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 100A
1mS
10mS
VDS= 60V
12
VDS= 150V
VDS= 240V
8
4
0
0
50
100
150
200
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
250
200
150
100
V_DD = 200V
R_G = 5Ω
T_J = 125°C
L = 100µH
t_d(off)
50
t_d(on)
0
40
60
80
100
120
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
1500
1200
900
E_on
600
E_off
V_DD = 200V
R_G = 5Ω
300
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
0
40 50 60 70 80 90 100 110 120
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
30,000
10,000
1,000
APT30M17JLL
Ciss
Coss
Crss
100
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
400
100
TJ =+150°C
TJ =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
100
V_DD = 200V
R_G = 5Ω
80 ^{TJ = 125°C}
t_f
L = 100µH
60
40
t_r
20
0
40
60
80
100
120
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
6,000
V_DD = 200V
I_D = 50A
5,000 T_J = 125°C
L = 100µH
E_ON includes
4,000 diode reverse recovery.
E_off
3,000
2,000
E_on
1,000
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE