APT20M42HVR Datasheet, PDF (4/4 Pages) Advanced Power Technology – Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

200
100
OPERATION HERE
LIMITED BY R_DS (ON)
50
100µS
1mS
10
5
TC =+25°C
TJ =+150°C
SINGLE PULSE
10mS
1
1
5 10
50 100 200
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
20
I_D = I_D [Cont.]
VDS=40V
16
VDS=100V
12
VDS=160V
8
4
0
0 50 100 150 200 250 300
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
15,000
10,000
5,000
1,000
500
APT20M42HVR
Ciss
Coss
Crss
100
.01
.1
1
10
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
300
100
TJ =+150°C TJ =+25°C
50
10
5
1
0.2
0.6
1.0
1.4
1.8
2.2
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
1.14 (.045)
0.88 (.035)
TO-258 Package Outline
17.65 (.695)
17.39 (.685)
8.89 (.350)
8.63 (.340)
21.21 (.835)
20.70 (.815)
13.84 (.545)
13.58 (.535)
17.96 (.707)
17.70 (.697)
4.19 (.165)
3.94 (.155)
19.05 (0.750)
12.70 (0.500)
Drain
Source
Gate
3.56 (.140) BSC
6.86 (.270)
6.09 (.240)
1.65 (.065) Dia. Typ.
1.39 (.055) 3 Leads
5.08 (.200) BSC
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058