APT20M34BLL_04 Datasheet, PDF (4/5 Pages) Advanced Power Technology – POWER MOS 7 MOSFET

297
100
OPERATION HERE
LIMITED BY R_DS (ON)
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
10
100 200
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 74A
10mS
12
VDS=40V
VDS=100V
8
VDS=160V
4
0
0 10 20 30 40 50 60 70 80 90 100
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
50
t_d(off)
40
V_DD = 133V
30 ^R_G ^{= 5Ω}
T_J = 125°C
L = 100µH
20
10
t_d(on)
0
10 30 50 70 90 110 130
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
1200
V_DD = 133V
R_G = 5Ω
1000 _{TJ = 125°C}
800
L = 100µH
E_ON includes
diode reverse recovery.
E_on
600
400
E_off
200
0
10 30 50 70 90 110 130
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
20,000
10,000
1,000
APT20M34BLL_SLL
Ciss
Coss
100
Crss
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
120
100
V_DD = 133V
R_G = 5Ω
T_J = 125°C
L = 100µH
80
t_f
60
t_r
40
20
0
10 30 50 70 90 110 130
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1200
E_off
1000
800
E_on
600
400
V_DD = 133V
I_D = 74A
200
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE