APT20M26WVR Datasheet, PDF (4/4 Pages) Advanced Power Technology – Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

300
OPERATION HERE
LIMITED BY R_DS (ON)
100
50
10µS
100µS
1mS
10
5 _{TC =+25°C}
TJ =+150°C
SINGLE PULSE
10mS
100mS
DC
1
1
5 10
50 100 200
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
20
I_D = I_D [Cont.]
VDS=40V
16
VDS=100V
12
VDS=160V
8
4
0
0
100 200 300 400 500
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
30,000
10,000
5,000
1,000
500
APT20M26WVR
Ciss
Coss
Crss
100
.01
.1
1
10
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
400
100
TJ =+150°C TJ =+25°C
50
10
5
1
0.3
0.7
1.1
1.5
1.9
2.3
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
1.80 (.071)
1.25 (.049)
TO-267 Package Outline
20.45 (.805)
20.20 (.795)
10.23 (.403)
10.10 (.398)
24.15 (.951)
23.60 (.929)
16.90 (.665)
16.40 (.646)
20.32 (.800)
20.07 (.790)
4.19 (.165)
3.95 (.156)
19.05 (.750)
12.70 (.500)
4.20 (.165) BSC
7.40 (.291)
6.60 (.260)
1.65 (.065) Dia. Typ.
1.40 (.055) 3 Leads
5.00 (.197) BSC
Dimensions in Millimeters and (Inches)
Drain
Source
Gate
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058