APT20M11JFLL Datasheet, PDF (4/5 Pages) Advanced Power Technology – POWER MOS 7 FREDFET

704
500
OPERATION HERE
LIMITED BY R_DS (ON)
100µS
100
50
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
10
1
5 10
50 100 200
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 176A
14
10mS
12
VDS=40V
10
VDS=100V
8
VDS=160V
6
4
2
0
0 50 100 150 200 250 300
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
160
140
120
100
80
V_DD = 130V
R_G = 5Ω
T_J = 125°C
L = 100µH
60
40
t_d(off)
t_d(on)
20
0
30 60 90 120 150 180 210 240 270
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
8000
6000
V_DD = 130V
R_G = 5Ω
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
4000
E_off
2000
E_on
0
30 60 90 120 150 180 210 240 270
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
30,000
10,000
1,000
APT20M11JFLL
Ciss
Coss
100
Crss
50
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
500
100
TJ =+150°C
50
TJ =+25°C
10
5
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
300
250
V_DD = 130V
R_G = 5Ω
T_J = 125°C
L = 100µH
200
t_f
150
t_r
100
50
0
30 60 90 120 150 180 210 240 270
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
10000
8000
6000
V_DD = 130V
I_D = 176A
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
E_off
4000
E_on
2000
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE