APT15GT60BRD Datasheet, PDF (4/5 Pages) Advanced Power Technology – The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs.

60
50
40
T_J = 150°C
T_J = 100°C
30
T_J = 25°C
20
T_J = -55°C
10
0
0
1
2
3
V_F, ANODE-TO-CATHODE VOLTAGE (VOLTS)
Figure 1, Forward Voltage Drop vs Forward Current
40
T_J = 100°C
V_R = 350V
30
30A
20
15A
10
7.5A
1200
1000
T_J = 100°C
V_R = 350V
APT15GT60BRD
800
30A
600
15A
400
200
7.5A
0
10
50 100
500 1000
di_F /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 2, Reverse Recovery Charge vs Current Slew Rate
2.0
1.6
1.2
0.8
t_rr
I_RRM
0.4
Q_rr
t_rr
Q_rr
00
200 400 600 800 1000
di_F /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 3, Reverse Recovery Current vs Current Slew Rate
100
30A
15A
80
7.5A
60
T_J = 100°C
V_R = 350V
40
0.0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 4, Dynamic Parameters vs Junction Temperature
500
25
T_J = 100°C
V_R = 350V
I_F = 15A
400
20
300
V_fr
15
200
10
20
100
5
t_fr
0
0
200 400 600 800 1000
di_F /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 5, Reverse Recovery Time vs Current Slew Rate
2.0
D=0.5
1.0
0
0
0
200 400 600 800 1000
di_F /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate
0.5
0.2
0.1
0.05
0.1
0.02
0.05
0.01
SINGLE PULSE
0.01
NOTE:
t₁
t₂
DUTY FACTOR D = t₁/t₂
PEAK T_J=P_DM x Z _JC + T_C
0.00510_-5
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTAVN_RG,URLEAVREPRUSLESVEODLUTRAGATEIO(VNO(LSTESC) ONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration