APT15GP90B_06 Datasheet, PDF (4/6 Pages) Advanced Power Technology – The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs

14
12
V_GE = 15V
10
8
6
4
V_CE = 600V
2 ^T_J ^{= 25°C, or 125°C}
R_G = 4.3Ω
L = 100µH
0
5 10 15 20 25 30 35
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
35
R_G = 4.3Ω, L = 100µH, V_CE = 600V
30
25
20
15
10
T_J = 25 or 125°C,V_GE = 15V
5
05
10
15
20
25
30
35
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
2000
V_CE = 600V
V_GE = +15V
R_G = 4.3Ω
1500
T_J = 125°C
1000
500
T_J = 25°C
0
5 10 15 20 25 30 35
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
2500
2000
V_CE = 600V
V_GE = +15V
T_J = 125°C
E_on2,30A
1500
1000
E_off,30A
E_on2,15A
500
E_on2,7.5A
E_off,15A
E_off,7.5A
0
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT15GP90B(G)
80
70
60
V_GE =15V,T_J=125°C
50
40
30
20
V_GE =15V,T_J=25°C
10
V_CE = 600V
R_G = 4.3Ω
L = 100µH
0
5 10 15 20 25 30 35
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
120 _{RG = 4.3Ω, L = 100µH, VCE = 600V}
100
T_J = 125°C, V_GE = 15V
80
60
40
T_J = 25°C, V_GE = 15V
20
05
10
15
20
25
30
35
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
1200
1000
V_CE = 600V
V_GE = +15V
R_G = 4.3Ω
T_J = 125°C
800
600
400
200
T_J = 25°C
05
10
15
20
25
30
35
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
2000
V_CE = 600V
V_GE = +15V
R_G = 4.3Ω
E_on2,30A
1500
1000
E_on2,15A
E_off,30A
500
E_off,15A
E_on2,7.5A
E_off,7.5A
0
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature