APT15GP60K Datasheet, PDF (4/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

18
16
14
V_GE= 10V
12
10
V_GE= 15V
8
6
4
V_CE = 400V
T_J = 25°C or 125°C
2
R_G = 5Ω
L = 100 µH
0
5
10
15
20
25
30
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
30
T_J = 25 or 125°C,V_GE = 10V
25
20
15
10
5
T_J = 25 or 125°C,V_GE = 15V
0
R_G =5Ω, L = 100µH, V_CE = 400V
5
10
15
20
25
30
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
700
600
V_CE = 400V
L = 100 µH
R_G = 5 Ω
T_J =125°C, V_GE=15V
500
T_J =125°C,V_GE=10V
400
300
200
T_J = 25°C, V_GE=15V
100
0 ^{TJ = 25°C, VGE=10V}
0
5
10 15 20 25 30
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
900
800
V_CE = 400V
V_GE = +15V
T_J = 125°C
700
E_on2 30A
600
E_off 30A
500
400
E_on2 15A
300
200 _{Eon2 7.5A}
E_off 15A
100
E_off 7.5A
0
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT15GP60K
80
V_GE =15V,T_J=125°C
70
60
V_GE =10V,T_J=125°C
50
40 _{VGE =15V,TJ=25°C}
30
20
V_CE = 400V
10 ^RG ^{= 5Ω}
L = 100 µH
V_GE =10V,T_J=25°C
0
5
10
15
20
25
30
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
100
80
T_J = 125°C, V_GE = 10V or 15V
60
40
T_J = 25°C, V_GE = 10V or 15V
20
R_G =5Ω, L = 100µH, V_CE = 400V
0
5
10
15
20
25
30
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
700
600
V_CE = 400V
L = 100 µH
R_G = 5 Ω
T_J = 125°C, V_GE = 10V or 15V
500
400
300
200
100
T_J = 25°C, V_GE = 10V or 15V
0
5
10 15
20
25
30
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
700
600
V_CE = 400V
V_GE = +15V
R_G = 5 Ω
500
E_on2 30A
400
E_off 30A
300
200
E_on2 15A
E_on2 7.5A
100
E_off 15A
E_off 7.5A
0
-50 -25 0 25 50 75 100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature