APT10088HVR Datasheet, PDF (4/4 Pages) Advanced Power Technology – Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

50
OPERATION HERE
LIMITED BY R_DS (ON)
10
5
10µS
100µS
1mS
1
.5 TC =+25°C
TJ =+150°C
SINGLE PULSE
10mS
100mS
DC
.1
1
5 10
50 100
500 1000
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
20
I_D = I_D [Cont.]
VDS=100V
16
VDS=200V
12
VDS=500V
8
4
0
0 50 100 150 200 250 300 350
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
15,000
10,000
5,000
APT10088HVR
Ciss
1,000
500
Coss
Crss
100
.01
.1
1
10
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
50
TJ =+150°C
TJ =+25°C
10
5
1
.5
.1
0.2
0.4
0.6
0.8
1.0
1.2
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
1.14 (.045)
0.88 (.035)
TO-258 Package Outline
17.65 (.695)
17.39 (.685)
8.89 (.350)
8.63 (.340)
21.21 (.835)
20.70 (.815)
13.84 (.545)
13.58 (.535)
17.96 (.707)
17.70 (.697)
4.19 (.165)
3.94 (.155)
19.05 (0.750)
12.70 (0.500)
Drain
Source
Gate
3.56 (.140) BSC
6.86 (.270)
6.09 (.240)
1.65 (.065) Dia. Typ.
1.39 (.055) 3 Leads
5.08 (.200) BSC
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058