APT10078BFLL_06 Datasheet, PDF (4/5 Pages) Advanced Power Technology – Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

56
OPERATION HERE
LIMITED BY R_DS (ON)
10
5
100µS
1mS
1
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
.1
1
10
100
1000
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 14A
12
VDS=100V
VDS=250V
8
VDS=400V
4
0
0 20 40 60 80 100 120 140
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
60
50
t_d(off)
40 ^VDD ^{= 667V}
R_G = 3Ω
30
T_J = 125°C
L = 100µH
20
10
t_d(on)
0
0
5
10
15
20
25
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
1400
V_DD = 667V
1200
R_G = 3Ω
T_J = 125°C
E_on
L = 100µH
1000 E_ON includes
diode reverse recovery.
800
600
400
200
E_off
0
0
5
10
15
20
25
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
10,000
1000
100
APT10078BFLL_SFLL
Ciss
Coss
Crss
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
50
40
t_f
30
V_DD = 667V
20 ^{RG = 3Ω}
T_J = 125°C
L = 100µH
t_r
10
0
0
5
10
15
20
25
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1000
E_on
800
600
400
E_off
200
V_DD = 667V
I_D = 14A
T_J = 125°C
L = 100µH
E_ON includes
0
diode reverse recovery.
0
5
10 15 20 25 30
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE