APT10026L2FLL_03 Datasheet, PDF (4/5 Pages) Advanced Power Technology – Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

152
OPERATION HERE
LIMITED BY R_DS (ON)
50
100µS
10
1mS
TC = +25°C
TJ = +150°C
SINGLE PULSE
1
1
10
100
1000
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 38A
10mS
12
VDS = 200V
8
VDS = 500V
VDS = 800V
4
0
0 50 100 150 200 250 300 350 400
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
160
140
t_d(off)
120
100
80
V_DD = 667V
R_G = 3Ω
T_J = 125°C
L = 100µH
60
40
20
t_d(on)
0
5 10 15 20 25 30 35 40 45 50 55 60
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
4000
V_DD = 667V
3500 ^{RG = 3Ω}
T_J = 125°C
3000 ^{L = 100µH}
E_ON includes
diode reverse recovery.
2500
E_on
2000
1500
1000
E_off
500
0
5 10 15 20 25 30 35 40 45 50 55 60
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
30,000
10,000
APT10026L2FLL
Ciss
1,000
Coss
Crss
100
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
100
V_DD = 667V
R_G = 3Ω
80 ^TJ ^{= 125°C}
L = 100µH
t_f
60
40
20
t_r
0
5 10 15 20 25 30 35 40 45 50 55 60
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
10000
V_DD = 667V
I_D = 38A
E_off
8000 ^{TJ = 125°C}
L = 100µH
E_ON includes
diode reverse recovery.
6000
4000
E_on
2000
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE