APT1001R1BN Datasheet, PDF (4/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

60 _APT1001R1BN
APT1001R3BN
OPERATION HERE
LIMITED BY R_DS (ON)
APT1001R1BN
10 _APT1001R3BN
10µS
100µS
1mS
10,000
1,000
APT1001R1/1001R3BN
Ciss
Coss
1
TC =+25°C
TJ =+150°C
SINGLE PULSE
10mS
100
100mS
DC
Crss
.1 ₁
5 10
50 100
1000
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
APT1001R1/1001R3BN
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
I_D = I_D [Cont.]
100
16
VDS=100V
12
VDS=200V
50
20 _{TJ = +150°C}
TJ = +25°C
VDS=500V
10
8
5
4
2
0
0
40
80 120 160 200
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
1
0
.5
1.0
1.5
2.0
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-247AD Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
3.55 (.140)
3.81 (.150)
0.40 (.016)
0.79 (.031)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source