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| MRF607 Datasheet, PDF (3/5 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | |||
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MRF607
PIN
(RS=50 OHMS)
L3
C1
L1
C2
L4
C5
C6
+
Vcc = 12.5 V
-
C4
L2
POUT
(RL=50 OHMS)
C3
Figure 1 - 175 MHz RF AMPLIFIER CIRCUIT FOR GPE,
AND EFFICIENCY SPECIFICATIONS.
C1
2.7-15 pF, ARCO 461
C2
9.0-180 pF, ARCO 463
C3, C4 5.0-80 pF ARCO 462
C5
1000 pF UNELCO
C6
5 µF, 25 Vdc,
.
L1
1 TURN #20 AWG, 3/8â I.D.
L2
3 TURNS #20 AWG, 3/8â I.D.
L3
0.22 µH MOLDED CHOKE
L4
0.15 µH MOLDED CHOKE WITH
TANTALUM FERROXCUBE 56-590-65-3B
BEAD ON GROUND LEAD
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
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