MRF553 Datasheet, PDF (3/5 Pages) Motorola, Inc – RF LOW POWER TRANSISTOR NPN SILICON

MRF553
FUNCTIONAL
Symbol
GPE
η
ψ
Test Conditions
Power Gain
Collector Efficiency
Load Mismatch
VSWR ≥ 10:1 All Phase Angles
Test Circuit-Figure 1
Pout = 1.5 W, VCE =12.5Vdc
f = 175 MHz
Test Circuit-Figure 1
Pout = 1.5 W, VCE =12.5Vdc
f = 175 MHz
Test Circuit-Figure 1
Pout = 1.5 W, VCE =12.5Vdc
f = 175 MHz
MRF553G
Value
Min.
Typ.
Max.
Unit
11.5
13
-
dB
50
60
-
%
No Degradation in Output Power
-
Figure 1. 140–175 MHz Broadband Circuit Schematic.
C1 — 36 pF Mini Underwood
C2 — 47 pF Mini Underwood
C3 — 91 pF Mini Underwood
C4 — 68 pF Mini Underwood
C5, C9 — 1.0 µF Erie Red Cap Capacitor C6, C10 — 0.1 µF, 35 V Tantulum
C7 — 470 pF Chip Capacitor
C8 — 2200 pF Chip Capacitor
R1 — 4.7 kΩ, 1/4 W
R2 — 100 Ω, 1/4 W
D1 — 1N4148 Diode
L1 — 3 Turns, #18 AWG, 0.210, ID, 3/16, Length
L2, L4, L7 — 0.62,, #18 AWG Wire Bent into “V” L3, L6 — 60 x 125 x 250 Mils Copper Pad on 27Mils
L5 — 12 µH Molded Choke
L8 — 7 Turns, #18 AWG, 0.170, ID, 7/16, Length
L9 — 1.0,, #18 AWG Wire with 5 Ferrite Beads B — Ferrite Bead
Thick Alumina Substrate
Board Material — Glass Teflon, ε r = 2.56, t = 0.0625,
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Rev A 9/2005