MRF3866 Datasheet, PDF (3/5 Pages) Motorola, Inc – HIGH-FREQUENCY TRANSISTORS NPN SILICON

FUNCTIONAL
Symbol
G
U max
Test Conditions
Maximum Unilateral Gain
IC = 50 mAdc, VCE = 15 Vdc, f = 300 MHz
MAG
|S₂₁|²
Maximum Available Gain
IC = 50 mAdc, VCE = 15 Vdc, f = 300 MHz
Insertion Gain
IC = 50 mAdc, VCE = 15 Vdc, f = 300 MHz
Gpe
Amplifier Power Gain
(VCC = 28 Vdc; POUT = 1 W; f = 400 MHz)
η
Collector Efficiency
(VCC = 28 Vdc; POUT = 1 W; f = 400 MHz)
MRF3866, R1, R2
MRF3866G, R1, R2
Value
Unit
Min.
Typ.
Max.
-
15
-
dB
-
17
-
dB
11.5
12.5
-
dB
10
dB
45
%
Table 1. Common Emitter S-Parameters, @ VCE = 15 V, IC = 50 mA
f
(MHz)
100
300
500
700
1000
S11
|S11|
∠φ
.632
-164
.683
-179
.710
171
.717
162
.715
158
S21
|S21|
∠φ
12.94
93
4.33
75
2.57
62
1.82
51
1.24
36
S12
|S12|
∠φ
.018
53
.039
61
.056
61
.071
62
.092
65
S22
|S22|
∠φ
.315
-27
.307
-29
.346
-43
.393
-58
.455
-72
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Rev A 9/2005