IRFS340A Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – Advanced Power Mosfet

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Fig 1. Output Characteristics
V_GS
Top : 15V
10 V
10¹
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5V
10⁰
10^-₁¹_0-1
@ Notes :
1. 250 µs Pulse Test
2. T_C = 25 ^oC
10⁰
10¹
V_DS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
1.2
0.9
V_GS = 10 V
0.6
V_GS = 20 V
0.3
@ Note : T_J = 25 ^oC
0.0
0
10
20
30
40
I_D , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
2000
1500
C _iss
C_iss= C_gs+ C_gd ( C_ds= shorted )
C_oss= C_ds+ C_gd
C_rss= C_gd
1000
C _oss
500
C _rss
@ Notes :
1. V_GS = 0 V
2. f = 1 MHz
0
10⁰
10¹
V_DS , Drain-Source Voltage [V]
IRFS340A
Fig 2. Transfer Characteristics
10¹
150 ^oC
10⁰
25 ^oC
10^-1
2
- 55 ^oC
@ Notes :
1. V_GS = 0 V
2. V_DS = 50 V
3. 250 µs Pulse Test
4
6
8
10
V_GS , Gate-Source Voltage [V]
Fig 4. Source-Drain Diode Forward Voltage
10¹
10⁰
10^-1
0.2
150 ^oC
25 ^oC
@ Notes :
1. V_GS = 0 V
2. 250 µs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
V_DS = 80 V
10
V_DS = 200 V
V_DS = 320 V
5
@ Notes : I_D = 10.0 A
0
0
10
20
30
40
50
60
Q_G , Total Gate Charge [nC]